INSULATED-GATE FIELD-EFFECT TRANSISTORS

Chapter 6 INSULATED-GATE FIELD-EFFECT TRANSISTORS

Lessons In Electric Circuits Volume III – Semiconductors Book
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Summary of Contents

Lessons In Electric Circuits Volume III – Semiconductors Book

  • Chapter 6INSULATED-GATEFIELD-EFFECT TRANSISTORSContents 312,6.1 312,Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 303 313,6.2 313,Depletion-type 313,IGFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304 322,6.3 322,Enhancement-type 322,IGFETs 322,– 322,PENDING . . . . . . . . . . . . . . . . . . . . . 313 322,6.4 322,Active-mode 322,operation 322,– 322,PENDING. . . . . . . . . . . . . . . . . . . . . . . 313 323,6.5 323,The 323,common-source 323,amplifier 323,– 323,PENDING . . . . . . . . . . . . . . . . . . . 314 323,6.6 323,The 323,common-drain 323,amplifier 323,– 323,PENDING . . . . . . . . . . . . . . . . . . . . 314 323,6.7 323,The 323,common-gate 323,amplifier 323,– 323,PENDING . . . . . . . . . . . . . . . . . . . . 314 323,6.8 323,Biasing 323,techniques 323,– 323,PENDING . . . . . . . . . . . . . . . . . . . . . . . . . . 314 323,6.9 323,Transistor 323,ratings 323,and 323,packages 323,– 323,PENDING . . . . . . . . . . . . . . . . . 314 324,6.10 324,IGFET 324,quirks 324,– 324,PENDING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315 324,6.11 324,MESFETs 324,– 324,PENDING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315 324,6.12 324,IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315*** INCOMPLETE ***6.1IntroductionAs was stated in the last chapter, there is more than one type of field-effect transistor. Thejunction field-effect transistor, or JFET, uses voltage applied across a reverse-biased PN junc-tion to control the width of that junction’s depletion region, which then controls the conduc-tivity of a semiconductor channel through which the controlled current moves. Another typeof field-effect device – the insulated gate field-effect transistor, or IGFET – exploits a similarprinciple of a depletion region controlling conductivity through a semiconductor channel, butit differs primarily from the JFET in that there is no directconnection between the gate lead303